DZ09238-F04

类 型:双滚珠

风 量:90.57~123.50CFM

尺 寸:80x80x38mm

额定电压:12V

重 量:153.0g

DZ08038-F06

类 型:双滚珠

风 量:90.57~123.50CFM

尺 寸:80x80x38mm

额定电压:12V

重 量:153.0g

DZ12038-F05

类 型:双滚珠

风 量:90.57~123.50CFM

尺 寸:80x80x38mm

额定电压:12V

重 量:153.0g

DA04056-F01

类 型:双滚珠

风 量:90.57~123.50CFM

尺 寸:80x80x38mm

额定电压:12V

重 量:153.0g

图片展示
图片展示

RU4N65P 650V/4A TO-220F N-Channel Advanced Power MOSFET HV Planar MOSFET

    Certification: RoHS, CE, ISO, CCC

    Shape: GT

    Shielding Type: Remote Cut-Off Shielding Tube

    Cooling Method: Naturally Cooled Tube

    Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor

    Working Frequency: High Frequency


  • Parameters

    Certification: RoHS, CE, ISO, CCC

    Shape: GT

    Shielding Type: Remote Cut-Off Shielding Tube

    Cooling Method: Naturally Cooled Tube

    Function: High Back Pressure Transistor, Microwave Transistor, Switch Transistor

    Working Frequency: High Frequency


Basic Info.

Model NO.RU4N65PStructurePlanar
Encapsulation StructureChip TransistorPower LevelHigh Power
MaterialSiliconFeatures1LowRDS(on)
Features2Lowgatecharge(typ.Qg=41.9nC)Features3100%UIStested
Features4RoHScompliantApplication3Power Factor Correction (Pfc)
Application4Switchedmodepowersupplies.Application6LEDdriver.
Transport PackagePlastic PackageSpecificationRU4N65P
OriginGuangdong, ChinaProduction Capacity10000 Pieces/Day, China


Product Description

Professional Transistor Wholesale Advanced Power Mosfet  100V/100A 3.9mΩ  DG100N02Q

RU4N65P 650V/4A TO-220F N-Channel Advanced Power MOSFET HV Planar MOSFET
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+86-769-21 665206

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Dongguan Merry Electronic CO., LTD Was established in year of 2013,Mainly engaged in design, development and sales semiconductors...

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