DZ09238-F04

类 型:双滚珠

风 量:90.57~123.50CFM

尺 寸:80x80x38mm

额定电压:12V

重 量:153.0g

DZ08038-F06

类 型:双滚珠

风 量:90.57~123.50CFM

尺 寸:80x80x38mm

额定电压:12V

重 量:153.0g

DZ12038-F05

类 型:双滚珠

风 量:90.57~123.50CFM

尺 寸:80x80x38mm

额定电压:12V

重 量:153.0g

DA04056-F01

类 型:双滚珠

风 量:90.57~123.50CFM

尺 寸:80x80x38mm

额定电压:12V

重 量:153.0g

图片展示
图片展示

N-Channel Enhancement Mode Field Effect Transistor Power MOSFET Fetures Applications Diode 20V, 5A CET-CES2312A

    Customization:Available
    Certification:RoHS, CE, ISO, CCC
    Function:High Back Pressure Transistor


  • Parameters
    Customization:Available
    Certification:RoHS, CE, ISO, CCC
    Function:High Back Pressure Transistor


Model NO.
CET-CES2312A
Structure
Planar
Encapsulation Structure
SOT-23
Material
Silicon
Features1
Extremely Low Switching Loss
Features2
Excellent Stability and Uniformity
Features3
100% Avalanche Tested
Features4
Built-in ESD Diode
Application1
Switch Mode Power Supply (SMPS)
Application2
Power Factor Correction (Pfc)
Application3
Uninterruptible Power Supply (UPS)
Application4
AC to DC Converters
Application5
Telecom
Application6
TV Power & LED Lighting Power
Transport Package
Plastic Package
Specification
Customized
Trademark
CET
Origin
Guangdong, China
Production Capacity
10000 Pieces/Day

Product Description

N-Channel Enhancement Mode Field Effect Transistor Power MOSFET Fetures Applications Diode 20V, 5A CET-CES2312A


Features :
• 20V, 5A, RDS(ON) = 33m
Ω  @VGS = 4.5V.
 
 RDS(ON) = 40mΩ   @VGS = 2.5V.
• High dense cell design for extremely low RDS(ON).
• Rugged and reliable.
• RoHS compliant.


Technical Data :

Package

SOT-23

BVDSS(V)

20

Rds(on)mΩ@10V
Rds(on)mΩ@5V
Rds(on)mΩ@4.5V

33

Rds(on)mΩ@2.5V

40

Rds(on)mΩ@1.8V
ID(A)

5

Qg(nC)@4.5V(typ)

7

Qg(nC)@10V(typ)
RθJC(ºC/W)

100

Pd(W)

1.25

Configuration

Single

Polarity

N


N-Channel Enhancement Mode Field Effect Transistor Power MOSFET Fetures Applications Diode 20V, 5A CET-CES2312A
Long press to look detail
Long by picture save/share
INQUIRY

enquiry form:

  • Please enter the verification code

Inquiry Content:


You have no items to require

Add Successfully

N-Channel Enhancement Mode Field Effect Transistor Power MOSFET Fetures Applications Diode 20V, 5A CET-CES2312A

Inquire Now
INQUIRY

enquiry form:

  • Please enter the verification code

Inquiry Content:


You have no items to require

Add Successfully

TEL

+86-769-21 665206

E-mail

JENNIE@MERRYELC.COM

WEB

WWW.MERRYELC.COM

图片展示

Dongguan Merry Electronic CO.,LTD

Dongguan Merry Electronic CO., LTD Was established in year of 2013,Mainly engaged in design, development and sales semiconductors...

  • Your Name *

  • E-mail *

  • Describe

  • Submit

  • Security Code
    Refresh the code
    Cancel
    Confirm

Copyright ©2022 Dongguan Merry Electronic CO.,LTD All Rights Reserved

Copyright ©2022 Dongguan Merry Electronic CO.,LTD All Rights Reserved | Log in

Hello! Customer service is online, welcome to consult~
Contacts
Service Hotline
+86-135 4936 8780
E-mail
JENNIE@MERRYELC.COM
Qrcode
Qrcode
WeChat
添加微信好友,详细了解产品
使用企业微信
“扫一扫”加入群聊
复制成功
添加微信好友,详细了解产品
我知道了