DZ09238-F04

类 型:双滚珠

风 量:90.57~123.50CFM

尺 寸:80x80x38mm

额定电压:12V

重 量:153.0g

DZ08038-F06

类 型:双滚珠

风 量:90.57~123.50CFM

尺 寸:80x80x38mm

额定电压:12V

重 量:153.0g

DZ12038-F05

类 型:双滚珠

风 量:90.57~123.50CFM

尺 寸:80x80x38mm

额定电压:12V

重 量:153.0g

DA04056-F01

类 型:双滚珠

风 量:90.57~123.50CFM

尺 寸:80x80x38mm

额定电压:12V

重 量:153.0g

图片展示
图片展示

HCS65R210FS 650V N-Channel Super Junction Fast recovery MOS

    Encapsulation Structure: Chip Transistor

    Application: LED Drive Power Supply, Medical Power Supply

    Certification: RoHS, CE, ISO, CCC

    Luminous Intensity: Standard

    Color: Black

    Structure: TO-220F

  • Parameters

    Encapsulation Structure: Chip Transistor

    Application: LED Drive Power Supply, Medical Power Supply

    Certification: RoHS, CE, ISO, CCC

    Luminous Intensity: Standard

    Color: Black

    Structure: TO-220F

Basic Info.

Model NO.HCS65R210FSStructurePlanar
Encapsulation StructureChip TransistorPower LevelHigh Power
MaterialSiliconFeatures1Extremely Low Switching Loss
Features2Excellent Stability and UniformityFeatures3100% Avalanche Tested
Features4Built-in ESD DiodeApplication1Switch Mode Power Supply (SMPS)
Application3Power Factor Correction (Pfc)Application4Uninterruptible Power Supply (UPS)
Application5AC to DC ConvertersApplication6Telecom, Solar
Transport PackagePlastic PackageOriginGuangdong, China
Production Capacity25000 Pieces/Day


Part Name

650V N-Channel Super Junction MOSFET


Features

- very Low FOM(RDs(on)X g)-Extremely low switching lossExcellent stability and uniformity- 100% Avalanche Tested

HCS65R210FS 650V N-Channel Super Junction Fast recovery MOS
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+86-769-21 665206

E-mail

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Dongguan Merry Electronic CO.,LTD

Dongguan Merry Electronic CO., LTD Was established in year of 2013,Mainly engaged in design, development and sales semiconductors...

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